Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
NXP Semiconductors is supplying a family of isolated gate-driver ICs to control the silicon-carbide (SiC) power switches at the heart of ZF Friedrichshafen’s next-gen electric-vehicle (EV) traction ...
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