San Francisco — Applied Materials Inc. took a big step into the high-k/metal-gate arena last week, rolling out a trio of tools for advanced gate-stack and related applications at 45 nanometers. Intel ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.

Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...