Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes. Cree, Inc. announces availability of its Silicon Carbide ...
A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
GOLETA, Calif.--(BUSINESS WIRE)--KYOCERA SLD Laser, Inc. (KSLD), a world leader in commercialization of laser light sources, is introducing its new high power 5 watt blue laser diode products for ...
Advanced Power Technology Europe has announced a line of fast diode power modules in the SP4 and SP6 packages for high-power and high-frequency applications. These modules are offered in full ...
Power diodes are a necessary component of all electronics, and are made of a semiconductor material — in most cases silicon — that conduct electrons in one direction. Transphorm’s power diodes are ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...
The paper represents the electrical behaviour of a new Gallium Arsenide (GaAs) power Schottky Diode compared to the bipolar silicon diodes. The paper also introduces its electrical measurements ...
High-power diode laser side pumped modules SP17 & SP18 can offer peak power of 30kW and 5kW respectively while achieving higher small signal gain (SSG: >30 for SP18, >55 for SP17>55), and better ...
Taiwan-based power MOSFET and diode suppliers, primarily involved in the supply chain for notebooks and other PCs, anticipate demand will recover around mid-2024. Save my User ID and Password Some ...
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